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| MITSUBISHI TRANSISTOR MODULES QM150DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-2HK * * * * * IC Collector current ........................ 150A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 4-6.5 930.25 B2X B2 E2 B2X 480.25 C2E1 30 E2 E2 B2 6 15 B1 E1 62 C1 C1 10.5 6 C2E1 E2 B1X 9 B1X 14 8 15.3 3 17 25 8 17 25 8 17 21.5 3 8 1.8 E1 B1 3-M6 Tab#110, t=0.5 16 LABEL 7 30 37 9.5 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 150 150 1000 8 1500 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.96~2.94 20~30 1.96~2.94 20~30 470 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Tj Tstg Viso -- Mounting torque Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=150A, IB=3A -IC=150A (diode forward voltage) IC=150A, VCE=2.8V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=600V, IC=150A, IB1=-IB2=3A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 2.0 200 2.5 3.5 1.8 -- 3.0 15 3.0 0.125 0.6 0.075 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 200 Tj=25C 160 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 0 1 2 3 4 5 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT IC (A) IB=1.5A IB=0.8A IB=0.4A IB=200mA 120 DC CURRENT GAIN hFE VCE=5.0V VCE=2.8V 80 IB=100mA 40 0 Tj=25C Tj=125C 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.8 2.2 2.6 3.0 3.4 3.8 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 1 BASE CURRENT IB (A) VBE(sat) VCE=2.8V Tj=25C SATURATION VOLTAGE VCE(sat) IB=3A Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 Tj=25C Tj=125C 4 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 2 7 VCC=600V 5 IB1=-IB2=3A Tj=25C 3 Tj=125C 2 10 1 7 5 3 2 10 0 7 5 3 2 ts 3 IC=200A 2 IC=150A 1 IC=100A SWITCHING TIME ton, ts, tf (s) tf ton 0 10 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 10 -1 VCC=600V IC=150A IB1=3A REVERSE BIAS SAFE OPERATING AREA 320 COLLECTOR CURRENT IC (A) ts, tf (s) 280 240 200 160 120 80 40 0 0 200 400 600 Tj=125C IB2=-5A IB2=-2A SWITCHING TIME ts tf Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 0 800 1000 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 D C DERATING FACTOR OF F. B. S. O. A. 100 COLLECTOR CURRENT IC (A) tw=50s 100s 90 SECOND BREAKDOWN AREA DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 COLLECTOR DISSIPATION 200 s 10 1 7 5 3 2 TC=25C NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 2 0.16 0.14 0.12 1m s VCE (V) CASE TEMPERATURE TC (C) 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Zth (j-c) (C/ W) 0.10 0.08 0.06 0.04 0.02 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 Tj=25C Tj=125C 0 0.4 0.8 1.2 1.6 2.0 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 1600 1400 1200 1000 800 600 400 200 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 Irr (A), Qrr (c) 10 3 7 5 3 2 10 2 7 5 3 2 10 2 VCC=600V IB1=-IB2=3A Tj=25C Tj=125C Irr Qrr 10 1 trr (s) trr 10 1 10 0 7 5 3 2 10 0 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 1.0 0.8 Zth (j-c) (C/ W) 0.6 0.4 0.2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999 |
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